Minority Carrier Recombination at Surface and Grain Boundaries

Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs

2014 We have investigated by cathodoluminescence the influence of atomic hydrogen on the minority carrier recombination at dislocations and sub-boundaries in GaAs. These extended defects have been introduced by plastic deformation at high temperature. The recombining character of these defects is not qualitatively changed by hydrogen. Revue Phys. Appl. 23 (1988) JUILLET 1988, PAGE 1337 Classifi...

Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Minority Carrier Recombination of Ordered Ga0.51In0.49P at High Temperatures

The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence (TRPL) in the temperature range of 77 500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increas...

Layering transitions at grain boundaries

We review various simplified models that have been advanced to describe layering (complexion) transitions at grain boundaries in multicomponent solids. In particular, we first outline lattice-gas, off-lattice atomistic and thermodynamic models that have been employed to investigate phase-like behavior at segregated grain boundaries. The results of these investigations are summarized in the form...

Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics